Samsung 发展 "PRAM"，取代 NAND 闪存

由 Bin Chen 于 3 years 之前发表

大多数的水果老手（小编我是新手），应该都对这句话琅琅上口 "你重置 PRAM（Parameter RAM，参数内存，让主机板储存日期、时间、设定等系统信息的暂存内存）了吗？" 不过这回 Samsung 发展中的 PRAM（Phase-Change RAM）芯片跟他就没啥太大关连性。

比起的 NAND 或是 NOR 快闪芯片，在读取速度上，PRAM 快了近三十倍，而寿命也延长了近十倍。Samsung 日前发布了 512MB PRAM 的原型芯片，预计在 2008 年正式上路。

新芯片运用了 "垂直电极" 及 "3D 晶体管结构" 两项技术，让芯片的尺寸缩小，同时在写入新数据时，也不必先将旧资料复写。着眼于 Samsung 日前发表的 32GB NAND 内存还是属于 40 奈米制程，就长期来看，PRAM 也将比 NAND 更省成本。

[原文连接]

[出自 textually.org]

文章分类: 科技新闻, 便携音像

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Neutral

fcicq @ Sep 12th 2006 8:31AM

闪存3个标准?

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